Item | MD150-RIE | MD200-RIE | MD200C-RIE | ||
Product size | ≤6 inches | ≤8 inches | ≤8 inches | ||
RF power source | 0-300W/500W/1000W Adjustable,automatic matching | ||||
Molecular pump | -/620(L/s)/1300(L/s)/Custom | Antiseptic620(L/s)/1300(L/s)/Custom | |||
Foreline pump | Mechanical pump/dry pump | Dry pump | |||
Process pressure | Uncontrolled pressure/0-1Torr controlled pressure | ||||
Gas type | H/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/Custom (Up to 9 channels, no corrosive & toxic gas) | H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels) | |||
Gas range | 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom | ||||
LoadLock | Yes/No | Yes | |||
Sample tem control | 10°C~Room tem/-30°C~100°C/Custom | -30°C~100°C /Custom | |||
Back helium cooling | Yes/No | Yes | |||
Process cavity lining | Yes/No | Yes | |||
Cavity wall tem control | No/Roomtem~60/120°C | Room tem-60/120°C | |||
Control System | Auto/custom | ||||
Etching material | Silicon-based:Si/SiO2/SiNx··· IV-IV: SiC Magnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film...... | Silicon-based: Si/SiO2/SiNx...... III-V(注3): InP/GaAs/GaN...... IV-IV: SiC II-VI (注3): CdTe...... Magnetic materials/alloy materials Metallic material: Ni/Cr/A1/Au...... Organic material: PR/PMMA/HDMS /organic film... | |||
It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment. | It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer |
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