PLASMA source | RF | ||
Power | ICP | _ | |
BIAS | 1000W(option) | ||
Applicable scope | 4~8 inch | ||
Single processing slice count | 1 | ||
Appearance dimensions | 850mmx900mmx1850mm | ||
System control | PLC | ||
Automation level | Manual |
Hardware Capability | ||
Uptime/Available time | ≧95% | |
Mean time to clean (MTTC) | ≦6 hours | |
Mean time to repair(MTTR) | ≦4 hours | |
Mean time between failures(MTBF) | ≧350 hours | |
Mean time between assistant(MTBA) | ≧24 hours | |
Mean wafer between broken(MWBB) | ≦1 in 10,000 wafers | |
Heating plate control | 50-250° |
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