Plasma Etching and Deposition Process Solutions

Etching：

Two electrodes are available for etching processes:

■ Electrode with wide temperature range (-150°C to +400°C), cooled by liquid nitrogen, liquid circulating refrigerant or variable temperature resistor. Optional purge and liquid exchange unit to automatically switch process mode.

■ Liquid controlled electrode supplied by circulating cooling unit.

Deposition:

Two electrodes are available for deposition process selection:

• ICP CVD electrodes provide high-quality films grown from room temperature to 250°C.
• PECVD equipment can be configured with resistive heating electrodes, with a maximum temperature of 400°C.

Reactive Ion Etching (RIE)

RIE is a simple and economical plasma etching solution, with common applications such as mask etching and failure analysis.

RIE Features:

• Solid-state RF generator and tightly coupled matching network for fast and synchronous etching.
• Full-area spray gas inlet ensures uniform gas distribution.
• Electrode temperature range is -150℃ to +400℃.
• Strong pumping capacity provides a wider process pressure window.
• Wafer pressure plate with helium back cooling for optimal wafer temperature control.

Inductively Coupled Plasma Etching (ICP)

The ICP etching source produces high-density active reactive ions at low pressure.

ICP Etching Features:

• Connect the chamber through a uniform high-conductance path to deliver reactive particles to the substrate, using high gas flow processes while maintaining low gas pressure.
• Electrodes are suitable for temperatures ranging from -150℃ to +400℃, equipped with helium back cooling and a series of mechanical pressure plate designs.
• Superior hardware and control systems to meet the needs of fast etching processes, such as Bosch processes.
• Provide 60 and 250mm etching sources to meet different wafer sizes and radical/ion ratios, and flexibly match process requirements.

Plasma Enhanced Chemical Vapor Deposition (PECVD):

The PECVD process modules are specifically designed to produce thin films with excellent uniformity and high deposition rates, and to modify the material properties of the films, such as refractive index, stress, electrical properties, and wet etch rates.

PECVD features:

• In-situ cavity clearing technology with endpoint detection
• A variety of grounded electrodes are available

The optimized upper electrode, working under high voltage, high RF power and high flow conditions, can accelerate the deposition rate of SiO2, Si3N4, SiON and amorphous Si while ensuring film performance and wafer uniformity.

RF process gas device, with corresponding gas delivery design, provides uniform plasma process through LF/RF switch, thereby accurately controlling film stress.

Inductively Coupled Plasma Chemical Vapor Deposition (ICP / CVD)

The ICP/CVD process module is used to deposit high quality thin films using high density plasma at low deposition pressure and temperature.

ICP / CVD features:

• Low temperature, low damage, high quality film deposition.
• Low damage films can be deposited at lower temperatures, including: SiO₂, Si ₃N4, SiON, Si, SiC, and the substrate temperature can be as low as 20°C.
• The ICP source size is 300mm, which can achieve process uniformity up to 200mm wafers.
• The temperature range of the electrode is -150°C to 400°C.
• In-situ cavity clearing technology with endpoint detection.